Novel Submicron Isolation Technique Of Gaas Active Layer Using Fibi-Mbe

Yasuo Bamba; Eizo Miyauchi; Hiroshi Arimoto; Tetsuo Morita; Akira Takamori; Hisao Hashimoto

doi:10.1117/12.963684

30 June 1986 Novel Submicron Isolation Technique Of Gaas Active Layer Using Fibi-Mbe

Yasuo Bamba, Eizo Miyauchi, Hiroshi Arimoto, Tetsuo Morita, Akira Takamori, Hisao Hashimoto

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963684
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Experiments on GaAs polycrystal formation for isolation were made by using a combined system of a focused-ion-beam implanter with molecular-beam-epitaxy equipment. We obtained 0.7-μm-wide micropolycrystals of an aspect ratio of 3.5 above 160-keV-Be-implanted (more than lx10¹⁵ cm^-2) GaAs epilayers. Micropolycrystals exhibited almost planar form and high resistivity even with donor doping of 3.2x10^l8 cm^-3. Single crystal regions adjacent to the micropolycrystals had good crystal quality which was confirmed by microscopic Raman spectroscopy. This new technique of micropolycrystal formation is attractive for planar isolation processing of GaAs devices with novel structures.

Citation Download Citation

Yasuo Bamba, Eizo Miyauchi, Hiroshi Arimoto, Tetsuo Morita, Akira Takamori, and Hisao Hashimoto "Novel Submicron Isolation Technique Of Gaas Active Layer Using Fibi-Mbe", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963684

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