Mask Technology For X-Ray Step-And-Repeat System

A. R. Shimkunas; J. J. LaBrie; P. E. Mauger; J. J. Yen

doi:10.1117/12.963675

30 June 1986 Mask Technology For X-Ray Step-And-Repeat System

A. R. Shimkunas, J. J. LaBrie, P. E. Mauger, J. J. Yen

Proceedings Volume 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V; (1986) https://doi.org/10.1117/12.963675
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

An x-ray mask suitable for use with a new x-ray step-and-repeat alignment system [1] is introduced. Design features are described which distinguish this stepper mask from the full-field x-ray mask reported earlier [2]. Processes for manufacturing such masks, patterned additively or subtractively, are described, as is the e-beam imaging technique. Finally, mask distortion results are presented and discussed with relation to mask design.

Citation Download Citation

A. R. Shimkunas, J. J. LaBrie, P. E. Mauger, and J. J. Yen "Mask Technology For X-Ray Step-And-Repeat System", Proc. SPIE 0632, Electron-Beam, X-Ray, and Ion-Beam Technology for Submicrometer Lithographies V, (30 June 1986); https://doi.org/10.1117/12.963675

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