Resist Characterization On Reflecting Substrates

John Hayes; William R. Bell II; Richard Ferguson; Andrew R. Neureuther

doi:10.1117/12.963619

9 July 1986 Resist Characterization On Reflecting Substrates

John Hayes, William R. Bell II, Richard Ferguson, Andrew R. Neureuther

Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986) https://doi.org/10.1117/12.963619
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

The bottleneck of quantitative characterization of resist materials is being relieved by the introduction of a commercial system with multiple channel capabilities working directly on silicon wafers. This convenience for the process engineer comes at considerable inconvenience in data analysis, primarily due to exposure standing wave effects from substrate reflection. On silicon, for example, an exposure variation of a factor of 8 occurs over a vertical distance of 65 nm within the resist. Data from this very thin layer can span almost the entire range of exposure state M of the resist and two orders of magnitude change in development rates. Experimental and software techniques developed in a benchmark study of the well characterized Kodak 820 resist are reported. Several software techniques were established for data analysis. A depth-dependent filtering technique was used to improve the signal-to-noise ratio of the rate vs depth data from the slowly developing channels. This noise is due to the high sampling rates, which are necessary to simultaneously monitor the most rapidly developing areas. A post processor for SAMPLE was developed to process the normal output of exposure state M versus depth and generate M values for the exposures specified in the data from the measurement system. A three column vector of development rate R, exposure state M and depth z is then generated for plotting R(M,z) and numerically fitting algebraic models. Measurements and data reduction were made on silicon wafers with various thin film coatings. A hard-baked resist coating was sufficiently absorbing that very little oscillation in the development rate with depth was observed. For aluminum coatings, it was not possible to get good thickness vs time or rate data. The rate versus depth on bare silicon wafers could be made well behaved after filtering. The resulting R(M,z) curve for bare silicon was somewhat noisy. Thus the use of a hard-baked coating is indicated in practice for resist characterization studies.

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John Hayes, William R. Bell II, Richard Ferguson, and Andrew R. Neureuther "Resist Characterization On Reflecting Substrates", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963619

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