Reconsideration Of Fundamental Processes And Molecular Design Principles For High Sensitivity Dry Developable X-Ray Resist

Shuzo Hattori; Shinzo Morita; Masaru Hori; Hitomi Yamada

doi:10.1117/12.963631

9 July 1986 Reconsideration Of Fundamental Processes And Molecular Design Principles For High Sensitivity Dry Developable X-Ray Resist

Shuzo Hattori, Shinzo Morita, Masaru Hori, Hitomi Yamada

Author Affiliations +

Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986) https://doi.org/10.1117/12.963631
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Fundamental processes and molecular design principles for high sensitivity dry developable X-ray resist are discussed experimentally and theoretically. Three factors, i.e., high G (number of chemical effect per 100 eV photon), high N (number of monomer unit in which a single chemical effect causes developable modification of polymer property) and high μm (mass absorption coefficient of monomer) are considered for design of a high sensitivity resist. Small modification of polymer resulting in high contrast was tried by doping tin into polymer film in a capacitively coupled gas flow type plasma polymerization reactor. The oxygen reactive ion etching rate of the film was successfully varied from 1700 to 100 A/min by changing the atomic ratio of tin to carbon from 0 to 26 %. A general way to connect a chemical effect to a dry developable polymer modification is discussed.

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Shuzo Hattori, Shinzo Morita, Masaru Hori, and Hitomi Yamada "Reconsideration Of Fundamental Processes And Molecular Design Principles For High Sensitivity Dry Developable X-Ray Resist", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963631

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