Paper
9 July 1986 Photochemical Image Enhancement (PIE)
James R. Sheats, Michael M. O'Toole, John S. Hargreaves
Author Affiliations +
Abstract
We describe an approach to submicron optical lithography that offers the potential, in conjunction with i-line lenses, to reach 0.5 microns using organic, spin-on materials. In this method, a resist layer is coated with a thin layer (0.5 μm or less) of photobleachable polymeric dye, which is sensitive to the imaging radiation while the resist is not. Image exposure creates a latent image in the dye, which is transferred into the resist by deep UV blanket exposure under conditions such that the dye is unreactive. The top layer (polymeric dye) is then removed and the resist developed. Computer simulations based on a 365nm, 0.42 N.A. imaging system predict a resolution of 0.50 pm with linewidth control of ±10% for ±10% exposure variations at 1 depth of field defocus, for all features types and sizes. There is no exposure penalty in this mechanism; the dose required to bleach the dyes is comparable to that for conventional positive resists.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James R. Sheats, Michael M. O'Toole, and John S. Hargreaves "Photochemical Image Enhancement (PIE)", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963638
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Transmittance

Image enhancement

Image transmission

Optical lithography

Photoresist processing

Polymers

Imaging systems

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