Optimized Material For Bottom Layer Of Trilevel Resist System

Noboru Moriuchi; Seiichiro Shirai; Takao Iwayanagi

doi:10.1117/12.963655

9 July 1986 Optimized Material For Bottom Layer Of Trilevel Resist System

Noboru Moriuchi, Seiichiro Shirai, Takao Iwayanagi

Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986) https://doi.org/10.1117/12.963655
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Requirements for the bottom layer of the trilevel resist system are examined with the aid of the SAMPLE simulator. Some conventional positive photoresists and our new bottom layer material RG-3900B are evaluated as a bottom layer. RG-3900B is a phenolic resin mixed with a novel azide compound. It is found that RG-3900B has the following excellent optical properties with relatively short baking time at about 200°C; it strongly absorbs the exposing light and is transparent at visible regions for alignment. Therefore, when applied as a bottom layer, it minimizes linewidth variations on highly reflective substrate topography without degradation of alignment accuracy. RG-3900B has been successfully applied to our various devices with multilevel metalization to obtain fine patterns.

Citation Download Citation

Noboru Moriuchi, Seiichiro Shirai, and Takao Iwayanagi "Optimized Material For Bottom Layer Of Trilevel Resist System", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963655

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