A Positive Photoresist Optimized For Both I-Line And UV-3 Exposure

John T. Grunwald; William F. Cordes III; Keith D. San Giacomo; Joseph Ben-Bassat; Eitan Shalom; Giora Ben-Shushan

doi:10.1117/12.963646

9 July 1986 A Positive Photoresist Optimized For Both I-Line And UV-3 Exposure

John T. Grunwald, William F. Cordes III, Keith D. San Giacomo, Joseph Ben-Bassat, Eitan Shalom, Giora Ben-Shushan

Proceedings Volume 0631, Advances in Resist Technology and Processing III; (1986) https://doi.org/10.1117/12.963646
Event: 1986 Microlithography Conferences, 1986, Santa Clara, United States

Abstract

Data is presented on a positive photoresist designated as PR-1024 Megabit (MB), whose chemistry includes a cresol novolak, coupled with 2-1-4 diazonapthoquinone chloride. The type and M.W. of the coupled novolak were found to be of prime importance. UV absorption of the photoactive compound in the resist is in the range of 230 to 380 nm, with prominent peaks at 230, 270 and 370nm. Extensive SEM data is presented showing geometries obtained on the Micralign 600-552HT in the UV-3 mode. Micron capabilities are demonstrated with edge wall profiles of approximately 85°. A salient feature of the resist is its availability both in the ECA solvent mode (PR-1024MB) as well as "safe solvent" variety (EPA-1024MB). Exposure energies in the UV-3 mode were studied, ranging from 170 to 270 mJ/cm². Linewidth control of both isolated/group lines is reported at various exposure energies, indicating wide process latitude. Used as an I-Line photoresist, sub-micron capabilities (0.5 micron) were demonstrated with edge acuities in the 80°-85° range. Wide process latitude is demonstrated with both types of exposure tools. Using I-Line steppeis and projection aligners, exposure energies were varied up to and including the 270 mJ/cm² region. Dry processing (plasma etching) data will also be displayed.

Citation Download Citation

John T. Grunwald, William F. Cordes III, Keith D. San Giacomo, Joseph Ben-Bassat, Eitan Shalom, and Giora Ben-Shushan "A Positive Photoresist Optimized For Both I-Line And UV-3 Exposure", Proc. SPIE 0631, Advances in Resist Technology and Processing III, (9 July 1986); https://doi.org/10.1117/12.963646

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