Paper
7 July 1986 Infra-Red Detection Using Minority Carrier Exclusion
T. Ashley, C. T. Elliott, A. M. White
Author Affiliations +
Proceedings Volume 0588, Recent Developments in Materials & Detectors for the Infrared; (1986) https://doi.org/10.1117/12.951765
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
Abstract
The responsivity of narrow gap photo-detectors (e.g CMT) can be increased, and noise processes reduced by the use of minority carrier exclusion in a suitably designed structure. It is found that, while diffusion plays no role within the exclusion region, it is a major factor in determining its size. Experimental data excellently match computer modelled predictions, showing that the reduced electron concentration in an uncooled device leads to significantly improved photoconductor performance.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Ashley, C. T. Elliott, and A. M. White "Infra-Red Detection Using Minority Carrier Exclusion", Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986); https://doi.org/10.1117/12.951765
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Cited by 8 scholarly publications.
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KEYWORDS
Diffusion

Sensors

Infrared detectors

Infrared radiation

Infrared sensors

Neodymium

Photoresistors

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