Self-Developing Polysilane Deep-UV Resists - Photochemistry, Photophysics, And Submicron Lithography

John M. Zeigler; Larry A. Harrah; A.Wayne Johnson

doi:10.1117/12.947830

18 April 1985 Self-Developing Polysilane Deep-UV Resists - Photochemistry, Photophysics, And Submicron Lithography

John M. Zeigler, Larry A. Harrah, A.Wayne Johnson

Proceedings Volume 0539, Advances in Resist Technology and Processing II; (1985) https://doi.org/10.1117/12.947830
Event: 1985 Microlithography Conferences, 1985, Santa Clara, United States

Abstract

A new class of alkyl silane copolymers with relatively facile self-developing behavior under deep UV exposure has been examined. These materials can reproduce 0.8 μ features by projection lithography with a KrF excimer light source. The mechanism of material removal is primarily photochemical in nature and yields chemically inert volatile siloxanes as the major photoproducts, via a high quantum yield silylene expulsion/oxidation process.

Citation Download Citation

John M. Zeigler, Larry A. Harrah, and A.Wayne Johnson "Self-Developing Polysilane Deep-UV Resists - Photochemistry, Photophysics, And Submicron Lithography", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947830

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