Paper
29 January 1985 Optically Tuned And Modulated Microwave Oscillator Circuits
P. R. Herczfeld, A. S. Daryoush, V. M. Contarino
Author Affiliations +
Proceedings Volume 0517, Integrated Optical Circuit Engineering I; (1985) https://doi.org/10.1117/12.945138
Event: 1984 Cambridge Symposium, 1984, Cambridge, United States
Abstract
This paper describes experimental results and theoretical modeling of optically controlled Dielectric Resonator Oscillator (DRO) and Gunn oscillator circuits operated at X-band. A commercially available DRO device was modified to facilitate the optical control of its output characteristics. The device was found to be optically tunable up to 15 MHz and FM rates up to 130 MHz were observed. The Gunn Oscillator circuit was designed in a microstrip configuration. A high resistivity Si wafer was incorporated in the resonant cavity as the optical tuning element. The circuit was tuned in excess of 10 MHz. The operation of these devices were modeled using analytical and computer aided design techniques and showed good agreement with the experimental results.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. R. Herczfeld, A. S. Daryoush, and V. M. Contarino "Optically Tuned And Modulated Microwave Oscillator Circuits", Proc. SPIE 0517, Integrated Optical Circuit Engineering I, (29 January 1985); https://doi.org/10.1117/12.945138
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Cited by 2 scholarly publications.
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KEYWORDS
Oscillators

Dielectrics

Resonators

Silicon

Modulation

Wafer-level optics

Electromagnetism

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