A High Sensitivity Two Layer Resist Process For Use In High Resolution Optical Lithography

M. P.C. Watts

doi:10.1117/12.941770

21 May 1984 A High Sensitivity Two Layer Resist Process For Use In High Resolution Optical Lithography

M. P.C. Watts

Proceedings Volume 0469, Advances in Resist Technology I; (1984) https://doi.org/10.1117/12.941770
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

A two layer resist process has been developed with a 7x reduction in pattern transfer exposure time compared to the "conventional" process that uses PMMA as the bottom layer. The reduction in exposure time was achieved by using a high sensitivity resist as the bottom layer. The pattern transfer wavelength is 310 nm, therefore a dye is needed in the top layer to make it highly absorbtive at 310 nm. This paper will describe the selection process for the dye, resist materials, and details of the process development. Examples of resist patterns will include a demonstration of the effect of partial transmission in the top layer on bottom layer patterns. It will be shown that a transmission of < 0.5% is re-quired for artifact free resist Patterns.

Citation Download Citation

M. P.C. Watts "A High Sensitivity Two Layer Resist Process For Use In High Resolution Optical Lithography", Proc. SPIE 0469, Advances in Resist Technology I, (21 May 1984); https://doi.org/10.1117/12.941770

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