A New Negative Resist For Deep UV Microlithography

M. A. Toukhy; R. F. Leonard

doi:10.1117/12.935135

7 November 1983 A New Negative Resist For Deep UV Microlithography

M. A. Toukhy, R. F. Leonard

Proceedings Volume 0394, Optical Microlithography II: Technology for the 1980s; (1983) https://doi.org/10.1117/12.935135
Event: 1983 Microlithography Conferences, 1983, Santa Clara, United States

Abstract

The production of VLSI semiconductor devices requires the patterning of circuits with minimum linewidths under 2 microns. Deep UV lithography utilizing radiation in the 220-280nm regime has the capability of meeting this resolution requirement in a production environment. Conventional photoresists have not adequate resolution and sensitivity in the deep UV. This paper presents data on a negative acting deep UV resist, WX303, which combines good photospeed with high resolution. Recent studies with WX303 imaged on a Micralign 500 operating in the UV-2 mode, demonstrated the submicron capabilities of this resist. Data is also presented on WX303 image profile modification by changes in development time and exposure energy.

Citation Download Citation

M. A. Toukhy and R. F. Leonard "A New Negative Resist For Deep UV Microlithography", Proc. SPIE 0394, Optical Microlithography II: Technology for the 1980s, (7 November 1983); https://doi.org/10.1117/12.935135

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