Growth And Characterization Of Vapor Deposited Indium Phosphide

B. W. Wessels; M. Inuishi

doi:10.1117/12.934276

15 September 1982 Growth And Characterization Of Vapor Deposited Indium Phosphide

B. W. Wessels, M. Inuishi

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934276
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

The chemical vapor deposition of indium phosphide using the In/HCl/PH3/H2 reactant system is described. The deposition kinetics were studied as function of reactant concentration and substrate temperature. Studies of deposition of both polycrystalline and single crystalline material indicated that the growth rate of the thin films was limited by surface kinetics via a Langmuir-type absorption mechanism. Stoichiometry of the gas phase influenced the electrical properties of the as-grown epitaxial layers. For a group V/III ratio of 0.70 in the growth ambient, net donor densities of 1.5 x 1016 cm-3 were observed in the undoped epitaxial layers. Transient capacitance spectroscopy indicated deep level concentrations of the order 1-10 x 1014 cm-3 in the n and p-type epitaxial InP.

Citation Download Citation

B. W. Wessels and M. Inuishi "Growth And Characterization Of Vapor Deposited Indium Phosphide", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934276

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available