Comparison Of InP Grown By The Chloride And Hydride Techniques

Kenneth A. Jones

doi:10.1117/12.934280

15 September 1982 Comparison Of InP Grown By The Chloride And Hydride Techniques

Kenneth A. Jones

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934280
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

It is shown that the steady state chloride growth process is thermodynamically similar to the hydride growth process. The observed growth rate dependence on the input PC13 pressure at lower PC13 pressures and on the downstream PC13 pressure can be explained for the chloride system using thermodynamics. The shape of the growth rate curves as functions of the input HCl and PH3 pressures can be described thermodynamically at lower pressures. The background carrier concentration in chloride grown films as a function of the input PC13 concentration can be explained thermodynamically, but the effects of downstream PCl3 cannot.

Citation Download Citation

Kenneth A. Jones "Comparison Of InP Grown By The Chloride And Hydride Techniques", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934280

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