Preamplifier Noise In Indium Antimonide Detector Systems

Paul D. LeVan

doi:10.1117/12.959353

3 December 1980 Preamplifier Noise In Indium Antimonide Detector Systems

Paul D. LeVan

Proceedings Volume 0246, Contemporary Infrared Sensors and Instruments; (1980) https://doi.org/10.1117/12.959353
Event: 24th Annual Technical Symposium, 1980, San Diego, United States

Abstract

Voltage noise measurements have been made at temperatures from 77 to 150 K with three JFET's and a preamplifier which closely resembles one used with InSb photovoltaic detectors. noise minima were detected with the three JFET's at temperatures of 100-115 K, but the level Df voltage noise for two of the three JFET's was found to be below the noise level of InSb detector systems.

Citation Download Citation

Paul D. LeVan "Preamplifier Noise In Indium Antimonide Detector Systems", Proc. SPIE 0246, Contemporary Infrared Sensors and Instruments, (3 December 1980); https://doi.org/10.1117/12.959353

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