High Resolution Lithography Of Charge Coupled Devices (CCDS) Using Projection Printing

Edgar D. Lancaster Jr.; F. Kub; J. Taylor

doi:10.1117/12.956107

6 September 1978 High Resolution Lithography Of Charge Coupled Devices (CCDS) Using Projection Printing

Edgar D. Lancaster Jr., F. Kub, J. Taylor

Proceedings Volume 0135, Developments in Semiconductor Microlithography III; (1978) https://doi.org/10.1117/12.956107
Event: Developments in Semiconductor Microlithography III, 1978, San Jose, United States

Abstract

A four phase transparent gate CCD has been fabricated using 1:1 projection printing on all photo-lithographic processes which required resist resolution in the 2-4 µm range on many of the masking levels. The photolithographic processes and techniques used will be described and presented.

Citation Download Citation

Edgar D. Lancaster Jr., F. Kub, and J. Taylor "High Resolution Lithography Of Charge Coupled Devices (CCDS) Using Projection Printing", Proc. SPIE 0135, Developments in Semiconductor Microlithography III, (6 September 1978); https://doi.org/10.1117/12.956107

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