Paper
20 September 1976 Line Width Measurement By Diffraction Pattern Analysis
Harvey L. Kasdan, Nicholas George
Author Affiliations +
Abstract
The problem of measuring critical dimensions on photolithographic masks is becoming more acute as production linewidths dip below 2 μm. Visual techniques based on filar and image shearing eyepieces are limited by instrument resolution and operator acuity and consistency. An automatic system, based on diffraction pattern analysis, has been developed. Subjective operator judgment is not required to complete a measurement. Repeatability of 1% has been demonstrated for lines and gaps as small as 1.5 μm. The technique and device will be described and detailed experimental results will be presented. An analysis of the technique limitations shows that the current technique can easily be extended to measure the 0.5 to 1 μm widths. The ultimate potential may well be 1 microinch resolution at 1 microinch widths. Thus, diffraction pattern analysis may be the only viable alternative to the scanning electron microscope for submicrometer production line testing.
© (1976) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harvey L. Kasdan and Nicholas George "Line Width Measurement By Diffraction Pattern Analysis", Proc. SPIE 0080, Developments in Semiconductor Microlithography, (20 September 1976); https://doi.org/10.1117/12.954834
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Diffraction

Semiconductors

Microscopes

Objectives

Photodiodes

Optical lithography

Calibration

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