Single mask solution to pattern DRAM LILP layer at 42nm pitch using EUV CAR photoresist

Arijit Das; Kiho Yang; Toto Chen; Pierce Chang; Sheng-Tse Chen; Shu-De Gong; Hyo Seon Suh; Jeonghoon Lee; Jan-Frederik Finoulst; Chris Wilson; Paulina Rincon Delgadillo; Murat Pak

doi:10.1117/12.3011854

10 April 2024 Single mask solution to pattern DRAM LILP layer at 42nm pitch using EUV CAR photoresist

Arijit Das, Kiho Yang, Toto Chen, Pierce Chang, Sheng-Tse Chen, Shu-De Gong, Hyo Seon Suh, Jeonghoon Lee, Jan-Frederik Finoulst, Chris Wilson, Paulina Rincon Delgadillo, Murat Pak

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Proceedings Volume PC12953, Optical and EUV Nanolithography XXXVII; PC129530Z (2024) https://doi.org/10.1117/12.3011854
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Conference Poster

Abstract

The 10 nm technology class DRAM devices have already advanced with different patterning schemes using EUV [1-3]. Such efforts rely heavily on the choice of the underlayers, resist and the source-mask optimized (SMO) illumination mode. In this work, these concepts were explored in a single mask solution to pattern 42 nm pitch, Local Interconnect and periphery landing pad (LILP). To provide a more industry relevant solution, the use of Chemically Amplified Resists(CARs) has been adopted to pattern pillars and line/space (LS) patterns simultaneously. In addition, the following parameters have been evaluated to achieve the best printability of the two types of structures: (i) CARs tailored for high and low dose process (CAR-A and CAR-B), (ii) different underlayers (UL0, UL1, UL2), (iii) post exposure bake (PEB) conditions to determine the effect of dose-to-size and impact on the local CD uniformity (LCDU) in pillars and line width roughness (LWR) for LS. The performance comparison of different process options was done based on roughness/LCDU and dose-to-size (D-t-s). This paper is organized as follows: 1. Experimental Method- Different combination of underlayers and resist screening using a single EUV source and mask. Optimization of the mask CDs and the overlapping process performance of pillars and LS based on the metrology inspection. 2. Underlayer performance- Choice of the underlayer based on printability performance and roughness/LCDU for a fixed resist coated on different underlayers. 3. Resist performance- Defect-free process window (PW) evaluation with different CAR coated on the best performing underlayer.

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Arijit Das, Kiho Yang, Toto Chen, Pierce Chang, Sheng-Tse Chen, Shu-De Gong, Hyo Seon Suh, Jeonghoon Lee, Jan-Frederik Finoulst, Chris Wilson, Paulina Rincon Delgadillo, and Murat Pak "Single mask solution to pattern DRAM LILP layer at 42nm pitch using EUV CAR photoresist", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530Z (10 April 2024); https://doi.org/10.1117/12.3011854

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