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10 April 2024 Directed self-assembly enhanced EUV multi-patterning for low variability metal pitch scaling
Gurpreet Singh, Nityan Nair, Florian Gstrein, Richard Schenker
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Proceedings Volume PC12953, Optical and EUV Nanolithography XXXVII; PC129530G (2024) https://doi.org/10.1117/12.3010031
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States
Abstract
Patterning variability at tight metal pitch leads to a high risk for reliability failures. In 2023, we (Intel) demonstrated a novel EUV-based multi-patterning process enhanced by directed self-assembly (DSA) to scale metal pitch to 18 nm and below along with electrical validation data. The DSA process rectifies systematic and random variations in EUV patterns at 60% lower dose and in combination with spacer-aligned double patterning results in low-defectivity and low- variability metal patterns at the tightest pitch. Here we go further and demonstrate design flexibility, tone-inversion capability to enable subtractive metallization, sub-20nm metal end-to-ends, via and line resistances in line with model expectations, robust end-of-line standard cell chain and comb yields, and world-first demonstration of robust reliability data with matched dielectric breakdown and electromigration to a mature process at looser pitch.
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Gurpreet Singh, Nityan Nair, Florian Gstrein, and Richard Schenker "Directed self-assembly enhanced EUV multi-patterning for low variability metal pitch scaling", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530G (10 April 2024); https://doi.org/10.1117/12.3010031
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KEYWORDS
Metals
Directed self assembly
Extreme ultraviolet
Double patterning technology
Data modeling
Reliability
Data processing
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