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Optically active defects in wide band-gap semiconductors are a leading candidate for use as ultra high-sensitivity quantum sensors of strain as well as electric and magnetic fields. The availability of large size substrates, mature epitaxial growth and fabrication techniques, and excellent optical and electrical properties make silicon carbide (SiC) attractive, in comparison to diamond, for fully integrated and electrically controllable quantum magnetometers. We present high brightness and sensitivity of ensemble surface proximal defects deterministically generated within porous silicon carbide produced by a damage-free metal-assisted chemical etching method.
Xiuling Li
"Surface proximal color centers in SiC: deterministic creation and emission enhancement", Proc. SPIE PC12895, Quantum Sensing and Nano Electronics and Photonics XX, PC1289516 (9 March 2024); https://doi.org/10.1117/12.3001747
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Xiuling Li, "Surface proximal color centers in SiC: deterministic creation and emission enhancement," Proc. SPIE PC12895, Quantum Sensing and Nano Electronics and Photonics XX, PC1289516 (9 March 2024); https://doi.org/10.1117/12.3001747