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13 March 2024 High-speed electro-optic Kerr effect-based phase modulator on ultra-low loss thick-SOI platform
Arijit Bera, Abdulaziz E. Elfiqi, Mikko Harjanne, Takuo Tanemura, Yoshiaki Nakano, Timo Aalto
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Proceedings Volume PC12891, Silicon Photonics XIX; PC128910B (2024) https://doi.org/10.1117/12.3002574
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Silicon photonics has proved itself to be the most promising platform for the next generation photonic technologies and products, ranging from AI accelerators and quantum photonic integrated circuits to consumer healthcare. Conventionally, various sub-micron waveguide platforms are in use, having high propagation and coupling loss. In contrast, VTT’s 3-µm thick-SOI platform offers a more promising alternative, owing to its ultra-low propagation (3 dB/m), SMF coupling loss, and negligible polarization sensitivity. On this platform, we report a proof-of-principle demonstration of a high-speed electro-optic phase modulator based on electro-optic Kerr effect (or DC Kerr effect) as well as its wafer-scale manufacturability.
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Arijit Bera, Abdulaziz E. Elfiqi, Mikko Harjanne, Takuo Tanemura, Yoshiaki Nakano, and Timo Aalto "High-speed electro-optic Kerr effect-based phase modulator on ultra-low loss thick-SOI platform", Proc. SPIE PC12891, Silicon Photonics XIX, PC128910B (13 March 2024); https://doi.org/10.1117/12.3002574
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KEYWORDS
Electro optics
Kerr effect
Waveguides
Arrayed waveguide gratings
Quantum devices
Silicon
Silicon photonics
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