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14 March 2023 Theoretical characterization and computational discovery of AlGaN and BN UV light emitters with predictive atomistic calculations (Conference Presentation)
Emmanouil Kioupakis
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Proceedings Volume PC12441, Light-Emitting Devices, Materials, and Applications XXVII; PC1244107 (2023) https://doi.org/10.1117/12.2650404
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
In this talk, I will discuss results from atomistic calculations that uncover the mechanisms that limit the efficiency of UV light emitters and predict excitonic heterostructures with improved efficiency. In particular, I will show how Fermi-level control during the growth of p-type AlGaN contacts can promote acceptor incorporation and decrease charge compensation, increasing the electrical conductivity. I will also discuss the detrimental role of statistically random alloy disorder in AlGaN to the efficiency of carrier transport and recombination. Alternatively, we propose atomically thin GaN/AlN superlattices and quantum wells as a mechanism to improve the carrier mobility and to form stable excitons at room temperature that increase the radiative recombination rate. I will also discuss how the integration of hexagonal BN with nitride heterostructures is a promising material to realize efficient excitonic UV light emitters despite its indirect band gap.
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Emmanouil Kioupakis "Theoretical characterization and computational discovery of AlGaN and BN UV light emitters with predictive atomistic calculations (Conference Presentation)", Proc. SPIE PC12441, Light-Emitting Devices, Materials, and Applications XXVII, PC1244107 (14 March 2023); https://doi.org/10.1117/12.2650404
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KEYWORDS
Applied physics
Sun
Deep ultraviolet
Gallium nitride
Ultraviolet radiation
Excitons
Luminescence
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