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This talk focuses on improving the switching speed of electrolyte-gated transistors (EGTs). EGTs have organic or inorganic semiconductor channels; the key feature of all EGTs is the use of an electrolyte as the gate dielectric. The high capacitance electrolyte provides EGTs with attractive characteristics, but it also leads to slow switching speeds. We discuss the main causes for signal propagation delay in EGT inverters including parasitic resistances and capacitances and then show that by mitigating these factors delay times can be decreased below 100 ns. This allows switching at frequencies up to 10 MHz. Analysis suggests further improvements are possible.
C. Daniel Frisbie
"Electrolyte gated transistors and inverters operating at 10 MHz (Conference Presentation)", Proc. SPIE PC12211, Organic and Hybrid Field-Effect Transistors XXI, PC122110I (3 October 2022); https://doi.org/10.1117/12.2633938
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C. Daniel Frisbie, "Electrolyte gated transistors and inverters operating at 10 MHz (Conference Presentation)," Proc. SPIE PC12211, Organic and Hybrid Field-Effect Transistors XXI, PC122110I (3 October 2022); https://doi.org/10.1117/12.2633938