Presentation
1 April 2022 Laser nano-fabrication buried deep inside silicon wafers
Onur Tokel
Author Affiliations +
Abstract
Here, we demonstrate the first controlled nano-fabrication capability deep inside silicon wafers. We exploit a spatially-structured laser beam and novel fabrication approaches, in order to achieve multi-dimensional nano-confinement inside the bulk. We demonstrate the formation of 100-nm-sized buried structures. We further showcase this new capability with the first fully buried nano-photonic element inside silicon, a Bragg grating. To the best of our knowledge this constitutes the first controlled nano-fabrication capability, as well as the first functional nano-photonic device, created deep inside silicon without any surface alteration.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Onur Tokel "Laser nano-fabrication buried deep inside silicon wafers", Proc. SPIE PC11988, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXVII, PC1198805 (1 April 2022); https://doi.org/10.1117/12.2607911
Advertisement
Advertisement
KEYWORDS
Silicon

Semiconducting wafers

Nanofabrication

Semiconductor lasers

Nanophotonics

Nanotechnology

Silicon photonics

RELATED CONTENT

Hybrid III-V/silicon lasers
Proceedings of SPIE (May 01 2014)
Butt coupled mid IR diode lasers grown on patterned Si...
Proceedings of SPIE (January 01 1900)
Mid-IR lasers on group-IV substrates
Proceedings of SPIE (January 01 1900)

Back to Top