Presentation
21 March 2023 Recent development of GaN Power switching devices with Ion Implantation technology
Author Affiliations +
Abstract
Selective doping technique by ion implantation was applied to power devices. A novel activation method for p-type doping named as UHPA (Ultra High-Pressure Annealing) was recently developed. Using this method, edge termination of FLR (Field Limiting Rings) structure by Mg ion implantation for a pn diode was formed, and the improvement of the breakdown voltage was confirmed. JBS (Junction Barrier Schottky) diodes were also fabricated, which showed high performance such as breakdown voltage of 675V, specific on-resistance of 0.67mΩ·cm2 and avalanche capability. The activation of Mg using UHPA has enabled p-type selective doping even in GaN power devices. Financial supports: MEXT (JPJ005357 and JPJ009777)
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tetsu Kachi, Hideki Sakurai, Testo Narita, Maciej Matys, and Jun Suda "Recent development of GaN Power switching devices with Ion Implantation technology", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649083
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KEYWORDS
Ion implantation

Doping

Gallium nitride

Magnesium

Switching

Diffusion

Diodes

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