This PDF file contains the front matter associated with SPIE Proceedings Volume 9553, including the Title Page, Copyright information, Table of Contents, Invited Panel Discussion, and Conference Committee listing.

Traditional fabrication methods for the integrated circuit (IC) and the microelectromechanical systems (MEMS) industries have been developed primarily for two-dimensional fabrication on planar surfaces. More recently, commercial electronics are expeditiously emerging with non-planar displays and rapid prototype machines can be purchased for the price of a modern laptop. While electrospinning (ES) has been in existence for over 100 years, this fabrication method has not been adequately developed for commercial fabrication of electronics or the rapid prototyping industries. ES provides many benefits as a fabrication method including tunability of fiber size and affordable hardware. To realize the full potential of ES as a commonplace fabrication method for modern devices, precise control, real-time fiber morphology monitoring, and the creation of a comprehensive databank of accurate models for prediction is essential. The aim of this research is to accomplish these goals through several avenues. To improve fiber deposition control, both passive and active methods are employed to modify electric field lines during the ES process. COMSOL models have been developed to meticulously mimic experimental results for predictive planning, and an in situ laser diagnostic tool was developed to measure real-time fiber morphology during electrospinning. Further, post-processing data was generated through the use of two-dimensional fast Fourier transform (2D-FFT) to monitor alignment, and four-point conductivity measurements were taken via four independently-positioned micromanipulator probes. This article describes the devices developed to date, the a priori modeling approach taken, and resultant capabilities which complement ES as an attractive fabrication method for the electronic and photonic industry.

Recent breakthroughs in deterministic approaches to the fabrication of nanowire arrays have demonstrated the possibility of fabricating such networks using low-cost scalable methods. In this regard, we have developed a scalable growth platform for lateral fabrication of nanocrystals with high precision utilizing lattice match and symmetry. Using this planar architecture, a number of homo- and heterostructures have been demonstrated including ZnO nanowires grown over GaN. The latter combination produces horizontal, epitaxially formed crystals aligned in the plane of the substrate containing a very low number of intrinsic defects. We use such ordered structures as model systems in the interests of gauging the interfacial structural dynamics in relation to external stimuli. Nanosecond pulses of focused ion beams are used to slightly modify the substrate surface and selectively form lattice disorders in the path of nanowire growth to examine the nanocrystal, namely: its directionality and lattice defects. High resolution electron microscopies are used to reveal some interesting structural effects; for instance, a minimum threshold of surface defects that can divert nanowires. We also discuss data indicating formation of surface strains and show their mitigation during the growth process.

We present the results and progress of research to create a multiplex chemical sensor based on Au catalyzed vapor-liquid-solid (VLS) silicon nanowires deployed as resonant mass sensors. Each element of this sensor has a single VLS wire grown in close proximity to a Si photodiode. Together they create a Fabry-Pérot interferometer that allows for the sensitive detection of the beam’s resonant motion. Small changes in mass on the cantilever that occur as a result of chemical absorption on the functionalized Au surface shift the resonant frequency. Our integrated approach will allow large reductions in system complexity for this sensor class.

We report on the growth of GaAs-AlGaAs core-multishell nanowire quantum heterostructures by metalorganic vapor phase epitaxy, and their photoluminescence (PL) properties. Dense arrays of vertically-aligned GaAs nanowires were fabricated onto (111)B-GaAs wafers by Au-catalyzed self-assembly, and radially overgrown by two AlGaAs shells between which a few-nm thin GaAs shell was introduced to form a quantum well tube (QWT). Besides the GaAs nanowire core emission band peaked at around 1.503 eV, 7K PL spectra showed an additional broad peak in the 1.556- 1.583 eV energy interval, ascribed to the transition between electron and hole confined states within the QWT. The emission blue-shifts with the shrinkage of as-grown GaAs well tubes, as the nanowire local (on the substrate) density and height change.

Semiconductor nanowire (NW) solar cells have promising potentials in solar energy conversion, benefiting from their low fabrication cost and enhanced optical absorption through light confinement. Recently, we have shown that the absorption efficiency can be significantly improved in lead sulfide (PbS) NWs with high refractive indices, by a direct observation of 350% external quantum efficiency (EQE). In this proceeding paper, we further examine the optical resonance mechanism in this promising nanomaterial. Particularly, we will present our recent results on resonance modes calculation, polarization and substrate effects on optical resonance, and intensity dependent minority carrier diffusion lengths in single PbS NW Schottky junction solar cells.

The growth of ordered arrays of group III-nitride nanostructures on c-plane gallium nitride (GaN) on sapphire using selective-area metal organic chemical vapor deposition (MOCVD) is presented. The growth of these nanostructures promotes strain relaxation that allows the combination of high indium content active regions with very low dislocation densities and also gives access to nonpolar and semipolar crystallographic orientations of GaN. The influence of the starting template and the growth conditions on the growth rate and morphology is discussed. The growth of indium gallium nitride (InGaN) active region shells on these nanostructures is discussed and the stability of various crystallographic orientations under typical growth conditions is studied. Finally, the effect of the growth conditions on the morphology of pyramidal stripe LEDs is discussed and preliminary results on electrical injection of these LEDs are presented.

Standing waves of Fermi electrons in thin films between their two interfaces lead to a stabilization of films with certain thicknesses. Such Quantum Size Effects (QSE) were first reported for the growth of ultrathin lead layers on Cu(111). Initially, the preferred film thicknesses correspond to odd layers followed by a crossover to even layers around a 10 layers thick film. A beating pattern of the preference for odd and even layers is attributed to a non-perfect match of the Fermi wave length and the interlayer spacing. QSE’s can even be sufficiently strong to impose the crystalline structure of ultrathin films. The crystalline structure of ultrathin Bi-films on Ni(111) was found to be modified in order to establish a QSE-matched ratio of the Fermi wavelength and interlayer spacing leading quantum well driven allotropism of Bi. Recently we found evidence for the importance of QSE in nanowires too. Ultra thin Ir-nanowires on Ge(001) show distinct length preferences imposed by QSE.

Recent experimental research efforts on developing functional nanostructured III-nitride and metal-oxide materials via low-temperature atomic layer deposition (ALD) will be reviewed. Ultimate conformality, a unique propoerty of ALD process, is utilized to fabricate core-shell and hollow tubular nanostructures on various nano-templates including electrospun nanofibrous polymers, self-assembled peptide nanofibers, metallic nanowires, and multi-wall carbon nanotubes (MWCNTs). III-nitride and metal-oxide coatings were deposited on these nano-templates via thermal and plasma-enhanced ALD processes with thickness values ranging from a few mono-layers to 40 nm. Metal-oxide materials studied include ZnO, TiO2, HfO2, ZrO2, and Al2O3. Standard ALD growth recipes were modified so that precursor molecules have enough time to diffuse and penetrate within the layers/pores of the nano-template material. As a result, uniform and conformal coatings on high-surface area nano-templates were demonstrated. Substrate temperatures were kept below 200C and within the self-limiting ALD window, so that temperature-sensitive template materials preserved their integrity III-nitride coatings were applied to similar nano-templates via plasma-enhanced ALD (PEALD) technique. AlN, GaN, and InN thin-film coating recipes were optimized to achieve self-limiting growth with deposition temperatures as low as 100C. BN growth took place only for >350C, in which precursor decomposition occured and therefore growth proceeded in CVD regime. III-nitride core-shell and hollow tubular single and multi-layered nanostructures were fabricated. The resulting metal-oxide and III-nitride core-shell and hollow nano-tubular structures were used for photocatalysis, dye sensitized solar cell (DSSC), energy storage and chemical sensing applications. Significantly enhanced catalysis, solar efficiency, charge capacity and sensitivity performance are reported. Moreover, core-shell metal-oxide and III-nitride materials showed promise to be used in applications where flexibility is critical like functional membranes, textile and flexible electronic applications.

In the past few years, tremendous progress has been achieved on epitaxial growth and processing of group III nitride nano- and microrods. Furthermore, these growth improvements have allowed the fabrication of optoelectronic devices based nanorods as active elements, i.e. light emitting diodes (LEDs). However, their efficiency is still far behind the performance of conventional GaN-based light emitting diodes. The controlled growth of GaN nanorods offers a potential benefit for achieving higher efficiencies of III-Nitride based optoelectronic devices due to a high surface to volume ratio. Nanorods have a very large active area compared to their footprint. Since the active region is wrapped around the three-dimensional core (for core shell structures), the active layer scales with the rod’s aspect ratio (i.e. the ratio of height and diameter). Therefore, by controlling their density, diameter and height, a tremendous increase of active surface can be achieved. Additionally, the low defect density in nanorods allows the characterization of single extended defects which is of high interest for a clear understanding of the formation of these defects. In this study we present a direct nano-scale correlation of the optical properties with the actual real crystalline structure of single GaN nanorods using low temperature CL spectroscopy in a scanning transmission electron microscope (STEM). We concentrate on the crystalline quality, local In incorporation, n- and p-layer quality and defects of the complete structures.

Sonochemical growth technique is based upon the chemical effect of ultrasound on chemical reactions. This process is carried out at an ambient atmosphere without the need for a complex experimental set up and additional heating. This method is of significant importance because of it's vital application in various fields. ZnO nanorods were grown on glass substrates without any additional heat or surfactance by sonochemical growth technique. The grown nanostructures were characterized by Raman spectroscopy, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). Sonochemically grown ZnO nanorod networks were characterized for their antibacterial properties toward B.subtilis. These structures were also characterized for their CO sensing properties and photovoltaic performances for dye sensitized solar cell (DSSC) application. All material characterization and device performances suggest that sonochemsitry can be utilized as an alternative growth method for 1D ZnO nanostructures.

Although semiconductor wires exhibit unique properties that would benefit a range of devices, implementation of as-grown wires in a device brings challenges, in particular, for those that require large volume (e.g. thermoelectric (TE) devices). Therefore, a post-growth assembly of sub-micrometer-scale wires into a centimeter-scale structure would open new module architecture. In this paper, TE devices in the form of pellet (~1cm diameter) made of aggregated silicon (Si) wires will be described. Numerous Si wires were assembled into a 3D network with dimensions defined by a quartz ampule. Power generation was demonstrated at operational temperatures ~80°C and the performance was generalized for higher operational temperatures ~800°C.

Spectroscopy of individual CdSe Quantum Dots embedded in an innovative type Zn_1-xCd_xSe (x_Cd of up to 0.3) barrier of lower energy than a typical ZnSe one, is reported. A polarization transfer efficiency of up to -26.1% for the Quantum Dot without a Mn²⁺ ion and optical addressing of the QD embedding a single Mn²⁺ ion using a quasi-resonant excitation is demonstrated. Thanks to a shifting of QD emission energy below Mn²⁺ intraionic transition, operation of the studied QDs doped with several Mn²⁺ ions should be feasible without a loss of the QD quantum yield. This is beneficial for implementation of the presented Quantum Dots in magnetooptical devices operating in the visible spectral range.

At low temperature single CdTe quantum dot (QD) photoluminescence (PL) spectra contains four transitions resulting from the ground state, s-shell carriers recombination: the neutral exciton (X0), positively and negatively charged excitons (X+ and X-, respectively), and the biexciton (2X). With increasing temperature these PL peaks redshift, broaden, and decrease the intensity. The redshift is related to the bandgap shrinkage, while increased exciton-acoustic phonon coupling results in peaks broadening. The quenching of the PL intensity comes from thermal activation of carriers to other QDs or to excited states within the same dot. To define the confinement conditions in the conduction and valence band separately we investigated the influence of temperature on particular charge state (X+ and X-). For CdTe QDs in ZnTe barriers, we find that the PL vanishes at about 65 K. Importantly, we observe decreasing of the normalized X+ intensity, while the X- intensity remains approximately constant. On the contrary, for CdTe QDs in ZnMgTe barriers, the PL is visible up to 115 K and the decrease of the normalized X+ intensity is substantially slower. These results point out that Mg incorporation in the barrier increases the hole confinement along the growth axis. As a consequence, the hole states are moved further apart in energy compared to those in CdTe dots in ZnTe barriers, inhibiting the thermal activation of s-shell carriers to excited states. Our result demonstrate that a proper design of the valence band structure should lead to room temperature emission from CdTe QDs.

The majority of modern infrared photon imaging devices are based on epitaxially grown bulk semiconductor materials. Colloidal quantum dot (CQD)-based infrared devices provide great promise for significantly reducing cost as well as significantly increased operating temperatures of infrared imaging systems. In addition, CQD-based infrared devices greatly benefit from band gap tuning by controlling the CQD size rather than the composition. In this work, we investigate the absorption coefficient of HgTe CQD films as a function of temperature and cutoff wavelength. The optical absorption properties are predicted for defect-free HgTe films as well as films which vary from ideal.

Solid-state junctions based on a metal-insulator-semiconductor (MIS) architecture are of great interest for a number of optoelectronic applications such as photovoltaics, photoelectrochemical cells, and photodetection. One major advantage of the MIS junction compared to the closely related metal-semiconductor junction, or Schottky junction, is that the thin insulating layer (1-3 nm thick) that separates the metal and semiconductor can significantly reduce the density of undesirable interfacial mid-gap states. The reduction in mid-gap states helps “un-pin” the junction, allowing for significantly higher built-in-voltages to be achieved. A second major advantage of the MIS junction is that the thin insulating layer can also protect the underlying semiconductor from corrosion in an electrochemical environment, making the MIS architecture well-suited for application in (photo)electrochemical applications. In this presentation, discontinuous Si-based MIS junctions immersed in electrolyte are explored for use as i.) photoelectrodes for solar-water splitting in photoelectrochemical cells (PECs) and ii.) position-sensitive photodetectors. The development and optimization of MIS photoelectrodes for both of these applications relies heavily on understanding how processing of the thin SiO2 layer impacts the properties of nano- and micro-scale MIS junctions, as well as the interactions of the insulating layer with the electrolyte. In this work, we systematically explore the effects of insulator thickness, synthesis method, and chemical treatment on the photoelectrochemical and electrochemical properties of these MIS devices. It is shown that electrolyte-induced inversion plays a critical role in determining the charge carrier dynamics within the MIS photoelectrodes for both applications.

We discuss the emerging role of solution processing and functional ink formulation in the fabrication of devices based on two dimensional (2d) materials. By drawing on examples from our research, we show that these inks allow 2d materials to be exploited in a wide variety of applications, including in photonics and (opto)electronics.

In this work, three-dimensional (3-D) p-n junctions were formed for the fabrication of field ionization gas sensors and solar cells. P-Si micro-pillars/ZnO NWs, n-TiO2-nanorod/p-CdTe and n-Si-NW/p-CuInSe₂(CIS) material combinations were preferred for the construction of p-n hetero-junction solar cells. Vertically well-aligned Si NWs were synthesized over the surface of n-type silicon wafer by using electroless etching technique. The synthesized Si-NWs embedded into a sputter deposited mono-phase chalcopyrite thin film (CIS) for the realization of nanowire array embedded in thin film type inorganic solar cell, which exhibited a 1.51% power conversion efficiency. In addition to Si nanowires, high aspect ratio vertically well- oriented p- silicon micropillars (MPs) were also synthesized using deep reactive ion Etching (DRIE) process with the BOSCH recipe of cyclical passivation and etching. Three-dimensional (3D) p-Si-MPs/n-ZnO-NWs heterostructures were constructed from hydrothermally grown dense arrays of ZnO nanowires onto these p-type silicon micropillars. The device structures were tested for both the field ionization gas sensor and photovoltaic applications, which showed very promising results. As a final part of this study, TiO₂ nanorods (NRs) were grown on FTO glass substrates by using hydrothermal technique, which is sequentially coated with CdTe thin film (sputtering) and subjected to CdCl₂ chemical solution treatment to fabricate a core-shell model solar cell with a power conversion efficiency over 0.4% power conversion efficiency.

We propose a novel flexible and stackable resistive random access memory (ReRAM) array with multi-layered crossbar structures fabricated on a PET flexible substrate through EHD system. The basic memory block of the proposed device is based on one resistor and multi-layered column memristors (1R-MCM) structure, which can be easily extended to 3 dimensional columns for a high integration. To fabricate the device, the materials Ag for top and bottom electrodes, PVP for memristor, and (MEH:PPV and PMMA in acetonitrile) for pull-up resistors are used. Memory single cell is consisted of a high OFF/ON ratio (~4663) memristor and a pull-up resistor (20 MΩ) that operate on the principles of voltage divider circuit. Memory logic data is retrieve in the form of voltage levels instead of sensing current the of crossbar array. Two memory crossbar arrays are stacked vertically and they are sharing column bars, each column’s memristors are with a single pull-up resistor. A 3x3 stacked memory with two layers that can store 18 bits of data is demonstrated to realize on a small area for a high integration.

The field of non-volatile memory devices has been boosted by resistive switching, a reversible change in electrical resistance of a dielectric layer through the application of a voltage potential. Tantalum oxide being one of the leading candidates for the dielectric component of resistance switching devices was investigated in this study. 55nm TaOx devices in all states were compared through cross sectional TEM techniques including HRTEM, EELS, and EFTEM and will be discussed in this presentation. Based on the chemical and physical features found in the cross sectioned nanodevices we will discuss the switching mechanism of these nanoscale devices.

Scanning transmission electron microscopy (STEM) annular dark field (ADF), high angle annular dark field (HAADF), cathodoluminescence (CL) and energy-dispersive X-ray spectroscopy (EDX) analysis were carried out to investigate the structural and optical properties of (AlxGa1-x)0.5In0.5P light emitting diodes (LEDs). Extended defect structures were observed in the LED active region, which exhibit defect emission that is shifted by 0.25 eV relative to the multi quantum well (MQW) emission. The morphology and composition of the defect structures was elucidated and the results confirmed by growth experiments and photoluminescence (PL) measurements.

Low-dimensional carbon nanostructures such as nanotubes (CNTs) and graphene have excellent electronic, optoelectronic and mechanical properties, which provide fresh opportunities for designs of optoelectronic devices of extraordinary performance in addition to the benefits of low cost, large abundance, and light weight. This work investigates photodetectors made with CNTs and graphene with a particular focus on carbon-based nanohybrids aiming at a nanoscale control of photon absorption, exciton dissociation and charge transfer. Through several examples including graphene/GaSe-nanosheets, graphene/aligned ZnO nanorods, SWCNT/P3HT, and SWCNT/biomolecule, we show an atomic-scale control on the interfacial heterojunctions is the key to high responsivity and fast photoresponse in these nanohybrids optoelectronic devices.

Two -dimensional transition-metal dichalcogenides (2D-TMDs) have attracted attention for applications in electronics and photonics, as well as for the wealth of new scientific phenomena that arise at low dimensionality. Recently, the ability to grow 2D-TMDs by chemical vapor deposition has opened the path to large area devices, but also to the synthesis of semiconductor alloys with tunable bandgaps. In this presentation, I will discuss our recent experimental work in exploring the optoelectronic properties of 2D MoS_2(1-x)Se_2x alloys spanning the compositional range. In particular, we report the observation of a new regime of operation where the photocurrent depends superlinearly on light intensity. We use spatially-resolved photocurrent measurements on devices consisting of CVD-grown monolayers to show the photoconductive nature of the photoresponse, with the photocurrent dominated by recombination and field-induced carrier separation in the channel. Time-dependent photoconductivity measurements show the presence of persistent photoconductivity for the S-rich alloys, while photocurrent measurements at fixed wavelength for devices of different alloy compositions show a systematic decrease of the responsivity with increasing Se content associated with increased linearity of the current-voltage characteristics. A model based on the presence of different types of recombination centers is presented to explain the origin of the superlinear dependence on light intensity, which emerges when the non-equilibrium occupancy of initially empty fast recombination centers becomes comparable to that of slow recombination centers.

Metamaterials designed for the visible or near IR wavelengths require patterning on the nanometer scale. To achieve this, e-beam lithography is used, but it is extremely difficult and can only produce 2D structures. A new alternative technique to produce 2D and 3D structures involves laser fabrication using the Nanoscribe 3D laser lithography system. This is a direct laser writing technique which can form arbitrary 3D nanostructures on the nanometer scale and is based on multi-photon polymerization. We are creating 2D and 3D metamaterials via this technique, and subsequently conformally coating them using Atomic Layer Deposition of oxides and Ag. We will discuss the optical properties of these novel composite structures and their potential for dual resonant metamaterials.

Na-ion batteries have received considerable attention in recent years but still face performance challenges such as limited cycle lifetime and low capacities at high current rates. In this work, we propose novel combinations of preand post-synthesis treatments to modify known Na-ion battery electrode materials to achieve enhanced electrochemical performance. We work with two model metal oxide materials to demonstrate the effectiveness of the different treatments. First, wet chemical preintercalation is combined with post-synthesis aging, hydrothermal treatment, and annealing of α-V₂O₅, resulting in enhanced capacity retention in a Na-ion battery system. The hydrothermal treatment resulted in an increased specific capacity of nearly 300 mAh/g. Second, post-synthesis acid leaching is performed on α- MnO_2, also resulting in improved electrochemical capacity. The chemical, structural, and morphological changes brought about by the modifications are fully characterized.

In this paper, silver thin films deposited on SiO₂ substrates with a germanium wetting layer fabricated by electron-beam evaporation were studied. The characterization methods of XTEM, FTIR, XRD and XRR were used to study the structural properties of silver thin films with various thicknesses of germanium layers. Silver films deposited with very thin (1-5nm) germanium wetting layers show about one half of improvement in the crystallite sizes comparing silver films without germanium layer. The surface roughness of silver thin films significantly decrease with a thin germanium wetting layer, reaching a roughness minimum around 1-5nm of germanium, but as the germanium layer thickness increases, the silver thin film surface roughness increases. The relatively higher surface energy of germanium and bond dissociation energy of silver-germanium were introduced to explain the effects the germanium layer made to the silver film deposition. However, due to the Stranski-Krastanov growth mode of germanium layer, germanium island formation started with increased thickness (5-15nm), which leads to a rougher surface of silver films. The demonstrated silver thin films are very promising for large-scale applications as molecular anchors, optical metamaterials, plasmonic devices, and several areas of nanophotonics.

Inorganic, low bandgap semiconductors such as Bi2Te3 have adequate efficiency for some thermoelectric energy conversion applications, but have not been more widely adopted because they are difficult to deposit over complex and/or high surface area structures, are not eco-friendly, and are too expensive. As an alternative, conducting polymers have recently attracted much attention for thermoelectric applications motivated by their low material cost, ease of processability, non-toxicity, and low thermal conductivity. Metal-organic frameworks (MOFs), which are extended, crystalline compounds consisting of metal ions interconnected by organic ligands, share many of the advantages of all-organic polymers including solution processability and low thermal conductivity. Additionally, MOFs and Guest@MOF materials offer higher thermal stability (up to ~300 °C in some cases) and have long-range crystalline order which should improve charge mobility. A potential advantage of MOFs and Guest@MOF materials over all-organic polymers is the opportunity for tuning the electronic structure through appropriate choice of metal and ligand, which could solve the long-standing challenge of finding stable, high ZT n-type organic semiconductors. In our presentation, we report on thermoelectric measurements of electrically conducting TCNQ@Cu3(BTC)2 thin films deposited using a room-temperature, solution-based method, which reveal a large, positive Seebeck coefficient. Furthermore, we use time-dependent thermoreflectance (TDTR) to measure the thermal conductivity of the films, which is found to have a low value due to the presence of disorder, as suggested by molecular dynamics simulations. In addition to establishing the thermoelectric figure of merit, the thermoelectric measurements reveal for the first time that holes are the majority carriers in TCNQ@Cu3(BTC)2.

Several two-dimensional (2D) materials have been synthesized experimentally, but many theoretically predicted 2D materials are yet to be synthesized. Here, we will review a density-functional theory based framework to enable high-throughput screening of suitable substrates for the stabilization and functionalization of 2D layers. A Materials Project based open source python tool, MPInterfaces, based on this framework, is being developed to automate the search of suitable substrates as well as to characterize their effect on the structural and electronic properties of 2D materials. Lattice-matching, symmetry-matching, substrate surface termination, configuration sampling, substrate induced structural distortion and doping estimation algorithms are being developed and will be described in this article. This computational tool will be employed to identify suitable substrates for scores of technologically relevant 2D materials, leading to acceleration of their synthesis and application, and more efficient use of experimental resources.

Due to the diversity and multiple energy domains involved, Micro-Electromechanical Systems MEMS devices are vulnerable to several mechanical failures such as fatigue. They been widely used in military applications, radio frequency systems, pressure sensors, automotive industry, among several others. Most MEMS devices contain moving parts that are subjected to cyclic loading, which degrade the device´s efficiency. Due to the high importance of MEMS in various applications, it is necessary to know their lifetime to prevent any damage or process discontinuity to which the system is subject. There have been several investigations in particular on the fatigue analysis in presence of cracks, however in terms of lifetime under cycling load, information is not abundant. The fatigue analysis can be performed for characterizing the ability of materials to support many cycles. Some parts of systems are exposed to strong stress level experiences during its usable lifetime, so the analysis must be focused on them. In this paper, a simulated fatigue analysis of classic, Z-shape and optimized chevron with Z shape arms is shown. Simulations are made using Ansys 15.0, to obtain the arms lifetime of the system because they are subjected to greater stresses in the presence of cyclic loading.